june 2010 doc id 15641 rev 2 1/9 9 stps61l60c power schottky rectifier features high current capability avalanche rated low forward voltage drop current high frequency operation description this dual center tap schottky rectifier is suited for high frequency switch mode power supplies. packaged in to-247 and to-220ab, this device provides desktop smps designers with a low forward voltage drop device, and reduced leakage current, with the objective of making the application compliant with environmental care standards, or suitable for 80+ requirements. figure 1. electrical characteristics (a) table 1. device summary i f(av) 2 x 30 a v rrm 60 v t j (max) 150 c v f (typ) 0.560 v a. v arm and i arm must respect the reverse safe operating area defined in figure 12 v ar and i ar are pulse measurements (t p < 1 s). v r , i r , v rrm and v f , are static characteristics a1 k a2 a1 k a2 a1 k k a2 to-247 STPS61L60CW to-220ab stps61l60ct i f 2 x i o i o i r i ar v f(i o ) v to v f(2xi o ) v f v i i v v r v rrm "reverse" "forward" v ar x x www.st.com
characteristics stps61l60c 2/9 doc id 15641 rev 2 1 characteristics when the diodes 1 and 2 are used simultaneously : tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) . table 2. absolute ratings (limiting values per diode at 25 c unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 60 v i f(rms) forward rms voltage 50 a i f(av) average forward current = 0.5 t c = 125 c t c = 120 c per diode per device 30 60 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal t0-247 t0-220ab 530 400 a p arm repetitive peak avalanche power t p = 1 s tj = 25 c 11500 w v arm (1) maximum repetitive peak avalanche voltage t p < 1 s t j < 150 c, i ar < 43 a 80 v v asm (1) maximum single pulse peak avalanche voltage t p < 1 s t j < 150 c, i ar < 43 a 80 v t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature (2) 150 c 1. refer to figure 12 2. condition to avoid thermal r unaway for a diode on its own heatsink dptot dtj < 1 rth(j-a) table 3. thermal resistances symbol parameter value unit r th(j-c) junction to case to-247 per diode to t a l 0.95 0.6 c/w to-220ab per diode to t a l 1.1 0.7 r th(c) coupling to-247 0.25 to-220ab 0.3
stps61l60c characteristics doc id 15641 rev 2 3/9 to evaluate the conduction losses use the following equation: p = 0.44 x i f(av) + 0.006 x i f 2 (rms) table 4. static electrical characteristics (per diode) symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm --0.8 ma t j = 125 c - 150 350 v f (2) forward voltage drop t j = 25 c i f = 5 a - 0.360 - v t j = 125 c i f = 5 a - 0.255 - t j = 25 c i f = 15 a - 0.460 0.540 t j = 125 c i f = 15 a - 0.415 0.480 t j = 25 c i f = 30 a - 0.580 0.660 t j = 125 c i f = 30 a - 0.560 0.620 1. pulse test: t p = 5 ms, < 2% 2. pulse test: t p = 380 s, < 2% figure 2. average forward power dissipation vs. average forward current (per diode) figure 3. average forward current vs. ambient temperature ( = 0.5, per diode) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 =0.05 =0.1 =0.2 =0.5 =1 t =tp/t tp i (a) f(av) p (w) f(av) i (a) f(av) 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 r th(j-a) =r th(j-c) r th(j-a) =15 c/w t =tp/t tp to-247 to-220ab t amb (c) figure 4. normalized avalanche power derating vs. pulse duration figure 5. normalized avalanche power derating vs. junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (s) p p(t) p (1s) arm p arm 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 p(t) p (25 c) arm arm j t (c) j
characteristics stps61l60c 4/9 doc id 15641 rev 2 figure 6. non repetitive surge peak forward current vs. overload duration (max. values, per diode, to-247) figure 7. non repetitive surge peak forward current vs. overload duration (max. values, per diode, to-220ab) i (a) m 0 50 100 150 200 250 300 350 1.e-03 1.e-02 1.e-01 1.e+00 t c =25 c t c =75 c t c =125 c i m t =0.5 t(s) 0 50 100 150 200 250 300 350 1.e-03 1.e-02 1.e-01 1.e+00 t c =25 c t c =75 c t c =125 c i m t =0.5 i (a) m t(s) figure 8. relative variation of thermal impedance junction to case vs. pulse duration figure 9. reverse leakage current vs. reverse voltage applied (typical values, per diode) z/r th(j-c) th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 single pulse t (s) p i (ma) r 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 0 5 10 15 20 25 30 35 40 45 50 55 60 t j =125 c t j =100 c t j =75 c t j =50 c t j =25 c t j =150 c v (v) r figure 10. junction capacitance vs. reverse voltage applied (typical values, per diode) figure 11. forward voltage drop vs. forward current (per diode) c(pf) 100 1000 10000 1 10 100 f=1 mhz v osc =30 mv rms t j =25 c v (v) r i (a) fm 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 t j =25 c maximum values t j =125 c maximum values t j =125 c maximum values t j =125 c typical values t j =125 c typical values v (v) fm
stps61l60c characteristics doc id 15641 rev 2 5/9 figure 12. reverse safe operating area (t p < 1 s and t j < 150 c) 20 25 30 35 40 45 50 55 60 60 65 70 75 80 85 90 95 100 iarm (a) forbidden area operating area varm (v)
package information stps61l60c 6/9 doc id 15641 rev 2 2 package information epoxy meets ul94, v0 cooling method: conduction torque value: ? to-247 - 0.55 nm recommended, 1.0 nm maximum ? to-220ab - 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 5. to-247 dimensions ref. dimensions millimeters inches min. max. min. max. a 4.85 5.15 0.191 0.203 a1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 d (1) 1. dimension d plus gate protrusion does not exceed 20.5 mm 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e 5.45 typ. 0.215 typ. l 14.20 14.80 0.559 0.582 l1 3.70 4.30 0.145 0.169 l2 18.50 typ. 0.728 typ. ? p (2) 2. resin thickness around the mounti ng hole is not less than 0.9 mm 3.55 3.65 0.139 0.143 ? r 4.50 5.50 0.177 0.217 s 5.50 typ. 0.216 typ. e l2 s d c a1 back view heat-sink plane l1 l b1 b2 b a e 1 1 2 2 3 3 ? r ? p
stps61l60c package information doc id 15641 rev 2 7/9 table 6. to-220ab dimensions ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 f2 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.4 typ. 0.645 typ. l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. 3.75 3.85 0.147 0.151 a c d l7 dia l5 l6 l9 l4 f h2 g g1 l2 f2 f1 e m
ordering information stps61l60c 8/9 doc id 15641 rev 2 3 ordering information 4 revision history table 7. ordering information order code marking package we ight base qty delivery mode STPS61L60CW STPS61L60CW to-247 4.4 g 30 tube stps61l60ct stps61l60ct to-220ab 2.23 g 30 tube table 8. document revision history date revision changes 18-may-2009 1 initial release. 29-jun-2010 2 added figure 1 and figure 12 . added parameters v arm and v asm to ta bl e 2 . updated ta bl e 5 .
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